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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 60 Volts APPLICATION * General purpose applications. CHT55N1PT CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (FBPT-923) * Low current (Max.=500mA). * Suitable for high packing density. * Low voltage (Max.=60V) . * High saturation current capability. 0.37(REF.) 0.50.05 1.00.05 FBPT-923 1.00.05 0.25(REF.) CONSTRUCTION * PNP General Purpose Transistor 0.050.04 0.680.05 0.420.05 CIRCUIT (1) B C (3) 0.30.05 0.260.05 E(2) Dimensions in millimeters FBPT-923 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -55 - -55 MIN. MAX. -60 -60 -4 -500 -500 -100 100 +150 150 +150 V V V mA mA mA mW C C C 2006-07 UNIT RATING CHARACTERISTIC CURVES ( CHT55N1PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -60 V IC = 0; VEB = 60 V VCE = -1.0 V; note 1 IC = -10 mA IC = -100 mA VCEsat VBEsat Ccb fT Note 1. Pulse test: tp 300 s; 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector-base capacitance transition frequency IC = -100 mA; IB =-10 mA IC = -100 mA; VCE = -1.0 V IE = ie = 0; VCB =-20V ; f = 1 MHz IC = 100 mA; VCE =-1.0 V ; f = 100 MHz 100 100 - - - 50 - - -0.25 -1.2 3 - V V pF MHz - - MIN. MAX. -0.1 -0.1 UNIT uA uA |
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